Rambus Inc, a technology licensing company, has announced it has been awarded a Globalfoundries “Leading in Innovation” award at the Global Technology Conference held in Santa Clara, California.
Globalfoundries and Rambus have been collaborating on the foundry’s 28-nanometer super low power (28 nm-SLP) process, demonstrating the capabilities of one of the most power-efficient and highest performance analog/mixed-signal offerings for advanced system-on-chip (SoC) development.
“In a world of increasing complexity and competitiveness, innovative solutions that enrich the end-user experience are achieved through great partnerships,” said Sharon Holt, senior vice president and general manager of the Semiconductor Business Group at Rambus. “Rambus’ partnership with Globalfoundries is an integral part of our ongoing strategy to showcase our innovations and designs in silicon.”
The 28 nm-SLP technology is designed specifically for the next generation of smart mobile devices, enabling designs with faster processing speeds, smaller feature sizes, lower standby power and longer battery life. The technology is based on bulk silicon CMOS substrates and utilises high-k metal gate (HKMG) technology for superior control of the channel, with high on currents and low-leakage current. It enables full scaling from 40-nm in area and performance, including twice the gate density of industry standard 40 nm processes and an SRAM cell size shrink of more than 50 per cent.
“Rambus’ collaborative approach is the cornerstone of our strong working relationship that helps deliver innovative solutions to customers,” stated Mojy Chian, senior vice president of Design Enablement at Globalfoundries. “We are proud to honor Rambus with a ‘Leading in Innovation’ award for its dedication to driving innovations in technology.”
Rambus focuses on the development of technologies that enrich the end-user experience of electronic systems. Founded in 1990, Rambus has offices in California, North Carolina, Ohio, India, Germany, Japan, Korea, and Taiwan.
